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 MUR5150E
Preferred Device
SCANSWITCHTM Power Rectifier
For Use As A Damper Diode In High and Very High Resolution Monitors
http://onsemi.com
The MUR5150E is a state-of-the-art Ultrafast Power Rectifier specifically designed for use as a damper diode in horizontal deflection circuits for high and very high resolution monitors. In these applications, the outstanding performance of the MUR5150E is fully realized when paired with the appropriate 1500 V SCANSWITCH Bipolar Power Transistor.
* * * * *
1500 V Blocking Voltage 20 mjoules Avalanche Energy Guaranteed Peak Transient Overshoot Voltage Specified, 17 Volts (typical) Forward Recovery Time Specified, 175 ns (typical) Epoxy Meets UL94, VO at 1/8
SCANSWITCH RECTIFIER 5.0 AMPERES 1500 VOLTS
1 4 3
Mechanical Characteristics
* Case: Epoxy, Molded * Weight: 1.9 grams (approximately) * Finish: All External Surfaces Corrosion Resistant and Terminal * * *
Leads are Readily Solderable Lead Temperature for Soldering Purposes: 260C Max. for 10 Seconds Shipped 50 units per plastic tube Marking: U5150E
4
1 3 TO-220AC CASE 221B STYLE 1
MAXIMUM RATINGS
Rating Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current (Rated VR, TC = 100C) Peak Repetitive Forward Current (Rated VR, Square Wave, Per Leg 20 kHz, TC = 100C) Non-Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) Operating Junction and Storage Temperature Range Controlled Avalanche Energy Symbol VRRM VRWM VR IF(AV) IFRM Value 1500 Unit V
MARKING DIAGRAM
5.0 10
A A U5150E
IFSM
100
A U5150E = Device Code
TJ, Tstg WAVAL
-65 to +125 20
C mJ
ORDERING INFORMATION
Device MUR5150E Package TO-220 Shipping 50 Units/Rail
Preferred devices are recommended choices for future use and best overall value.
(c) Semiconductor Components Industries, LLC, 2000
1
October, 2000 - Rev. 2
Publication Order Number: MUR5150E/D
MUR5150E
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance -- Junction to Case Symbol RJC Value 2.0 Unit C/W
ELECTRICAL CHARACTERISTICS
Characteristic Maximum Instantaneous Forward Voltage (Note 1.) (iF = 2.0 Amps, TJ = 25C) (iF = 5.0 Amps, TJ = 25C) Maximum Instantaneous Reverse Current (Note 1.) (Rated dc Voltage, TJ = 125C) (Rated dc Voltage, TJ = 25C) Maximum Reverse Recovery Time (IF = 1.0 Amps, di/dt = 50 Amps/s) Maximum Forward Recovery Time (IF = 6.5 Amps, di/dt = 12 Amps/s) Peak Transient Overshoot Voltage 1. Pulse Test: Pulse Width = 300 s, Duty Cycle 2.0% Symbol vF 1.7 2.0 iR 100 10 trr tfr VRFM 130 175 17 500 50 175 225 20 ns ns Volts 2.0 2.4 A Typ Max Unit Volts
TYPICAL ELECTRICAL CHARACTERISTICS
i F , INSTANTANEOUS FORWARD CURRENT (AMPS) 100 50 20 TJ = 125C 85C 25C 5 2 1000 I R , REVERSE LEAKAGE CURRENT ( A) 100 10 1 0.1 TJ = 125C 80C 25C
10
1.0 0.5 0.2 0.1 0.6 1.0 1.4 1.8 2.2 2.6 vF, INSTANTANEOUS VOLTAGE (VOLTS) 3.0
0.01 0 0.3 K 0.6 K 0.9 K 1.2 K VR, REVERSE VOLTAGE (VOLTS) 1.5 K
3.4
0.001
Figure 1. Typical Forward Voltage
, AVERAGE POWER DISSIPATION (WATTS)
Figure 2. Typical Reverse Leakage Current
17.5 15 12.5 10 7.5 5 2.5 0
TJ = 125C
, AVERAGE FORWARD CURRENT (AMPS)
20
8.0 7.0 6.0 5.0 4.0 3.0 2.0 1.0 85 90 95 105 100 110 115 TC, CASE TEMPERATURE (C) 120 125 SQUARE WAVE dc (RATED VR APPLIED) RJC = 2.0C/W
SQUARE WAVE dc
F(AV)
P
1
2 3 4 5 6 IF(AV), AVG FORWARD CURRENT (AMPS)
7
8
Figure 3. Forward Power Dissipation
I
F(AV)
Figure 4. Current Derating Case
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2
MUR5150E
TYPICAL ELECTRICAL CHARACTERISTICS
250 225 C T , CAPACITANCE (pF) 200 175 150 125 100 75 50 25 0 0.1 1 10 VR, REVERSE VOLTAGE (VOLTS) 100 TYPICAL CAPACITANCE AT 0 V = 240 pF 100 kHz v f v 1.0 MHz
Figure 5. Typical Capacitance
300 T RR , REVERSE RECOVERY TIME (ns) 270 240
180 160 140 50 A/s 50 A/s 100 A/s 120 100 80 60 40 20 0
210 180 150 120 90 60 30 0 0
di/dt = 100 A/s
0.5
1
1.5 2 2.5 3 3.5 4 IF, FORWARD CURRENT (AMPS)
4.5
5
STORED RECOVERY CHARGE REVERSE RECOVERY TIME
Figure 6. Typical Reverse Switching Characteristics
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3
Q RR , STORED RECOVERY CHARGE (nC)
VR = 30 V
200
MUR5150E
PACKAGE DIMENSIONS TO-220 TWO-LEAD CASE 221B-04 ISSUE D
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. DIM A B C D F G H J K L Q R S T U STYLE 1: PIN 1. 2. 3. 4. INCHES MIN MAX 0.595 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.147 0.190 0.210 0.110 0.130 0.018 0.025 0.500 0.562 0.045 0.060 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 CATHODE N/A ANODE CATHODE MILLIMETERS MIN MAX 15.11 15.75 9.65 10.29 4.06 4.82 0.64 0.89 3.61 3.73 4.83 5.33 2.79 3.30 0.46 0.64 12.70 14.27 1.14 1.52 2.54 3.04 2.04 2.79 1.14 1.39 5.97 6.48 0.000 1.27
C Q B F T S
4
A
1 3
U
H K
L G
D J
R
SCANSWITCH is a trademark of Semiconductor Components Industries, LLC.
ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer.
PUBLICATION ORDERING INFORMATION
NORTH AMERICA Literature Fulfillment: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: ONlit@hibbertco.com Fax Response Line: 303-675-2167 or 800-344-3810 Toll Free USA/Canada N. American Technical Support: 800-282-9855 Toll Free USA/Canada EUROPE: LDC for ON Semiconductor - European Support German Phone: (+1) 303-308-7140 (Mon-Fri 2:30pm to 7:00pm CET) Email: ONlit-german@hibbertco.com French Phone: (+1) 303-308-7141 (Mon-Fri 2:00pm to 7:00pm CET) Email: ONlit-french@hibbertco.com English Phone: (+1) 303-308-7142 (Mon-Fri 12:00pm to 5:00pm GMT) Email: ONlit@hibbertco.com EUROPEAN TOLL-FREE ACCESS*: 00-800-4422-3781 *Available from Germany, France, Italy, UK, Ireland CENTRAL/SOUTH AMERICA: Spanish Phone: 303-308-7143 (Mon-Fri 8:00am to 5:00pm MST) Email: ONlit-spanish@hibbertco.com Toll-Free from Mexico: Dial 01-800-288-2872 for Access - then Dial 866-297-9322 ASIA/PACIFIC: LDC for ON Semiconductor - Asia Support Phone: 303-675-2121 (Tue-Fri 9:00am to 1:00pm, Hong Kong Time) Toll Free from Hong Kong & Singapore: 001-800-4422-3781 Email: ONlit-asia@hibbertco.com JAPAN: ON Semiconductor, Japan Customer Focus Center 4-32-1 Nishi-Gotanda, Shinagawa-ku, Tokyo, Japan 141-0031 Phone: 81-3-5740-2700 Email: r14525@onsemi.com ON Semiconductor Website: http://onsemi.com For additional information, please contact your local Sales Representative.
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4
MUR5150E/D


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